Samsung to Begin Production of 286-Layer 3D NAND Memory in China

• May 25, 2026

Samsung is set to commence production of advanced 286-layer 3D NAND memory chips in China, signaling a significant development in semiconductor manufacturing amid ongoing geopolitical tensions.

Expansion of 3D NAND Production Capacity in China

The move comes in the wake of U.S. government restrictions implemented in late 2022, which prohibit the export of equipment capable of manufacturing 3D NAND memory with more than 128 layers to China. Despite these rules targeting Chinese domestic production capabilities, Samsung, alongside SK hynix, secured exemptions allowing continued operations at their Chinese facilities for high-layer NAND technologies.

Samsung’s planned utilization of this exemption will enable the company to begin producing 286-layer 3D NAND memory chips at its fabrication plant in Xi’an within the next year. This marks a milestone in the evolution of memory density and efficiency in semiconductor components manufactured on Chinese soil.

By advancing 3D NAND technology production in China, Samsung hopes to sustain its competitive edge in the global market for flash memory products while navigating regulatory complexities. The higher layer count in 3D NAND chips typically translates to greater storage capacity and improved performance, attributes that are vital for a broad spectrum of applications ranging from smartphones to data centers.

This development reflects a broader trend of major semiconductor companies balancing global supply chain challenges and regional production strategies. Samsung’s ability to capitalize on exemptions under current export controls underscores the nuanced landscape of technology trade regulations impacting the semiconductor industry.

Details regarding the scale of production, potential product applications, or specific deployment timelines beyond the general timeframe have not been disclosed. However, the decision to proceed with 286-layer 3D NAND production in China highlights Samsung’s commitment to maintaining robust manufacturing capabilities amid evolving international trade policies.

As semiconductor technologies continue to advance rapidly, updates surrounding production location, technology nodes, and layer count in memory devices remain critical indicators of industry direction and competitive positioning.

Samsung plans to manufacture 286-layer 3D NAND memory in China, leveraging a regulatory exemption from US restrictions.