Tag: memory technology
SK hynix Begins Sample Shipments of HBM4E Memory to Narrow Gap with Samsung
SK hynix has commenced shipments of its HBM4E memory samples, aiming to compete more closely with Samsung’s early deliveries.
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Oregon State Researchers Develop Memory Device That Mimics Human Brain’s Forgetting Ability
Researchers at Oregon State University created a memory system that integrates sensing, storage, and processing, capable of forgetting unneeded data like the human brain.
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Researchers Develop Quantum-Based Magnetic Memory That Outperforms DRAM
Tokyo University and RIKEN researchers unveil a quantum spin-orbit memory device that is 25 times faster than DRAM with minimal heat and wear.
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Machdyne Unveils Radiation-Resistant FeRAM Storage Device with 200-Year Data Retention
German firm Machdyne introduces FERRIT, a modular FeRAM-based storage solution that offers radiation resistance and up to two centuries of data retention.
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SK hynix Explores Intel Partnership for Next-Gen HBM4 Memory Manufacturing
SK hynix is considering Intel as a manufacturing partner for its upcoming HBM4 memory, potentially shifting from TSMC reliance.
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Intel-Backed Startup Develops HB3DM Memory to Surpass HBM Bandwidth for AI Accelerators
Intel and partners introduce HB3DM memory technology promising higher bandwidth than HBM for AI accelerator memory stacks.
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Breakthrough in Memory Technology: First 3D X-DRAM Prototype Realized in Silicon
A pioneering 3D X-DRAM prototype has been created in silicon, marking a potential leap forward in memory density and addressing DRAM limitations.
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Samsung Ends Orders for LPDDR4 and LPDDR4X Mobile DRAM, Prepares for 1c DRAM Production
Samsung stops new orders for LPDDR4 and LPDDR4X mobile DRAM, shifting production lines to newer 1c DRAM technology by early 2027.
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Sandisk Plans Pilot Production of Advanced HBF Memory in Japan by Year-End
Sandisk aims to start pilot manufacturing of next-gen HBF memory in Japan by late 2026 with full-scale production targeted for 2027.
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AMD and Samsung Deepen Collaboration on HBM4 Memory for AI Accelerators
AMD and Samsung have signed a new memorandum to advance their joint development of HBM4 memory technology for AI accelerator applications.
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Micron Unveils 3GB GDDR7 Memory Chips with Data Speeds Up to 36 Gbps
Micron introduces 3GB GDDR7 memory chips boasting data transfer rates reaching 36 Gbps per pin.
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Chinese Researchers Develop Promising FeFET-Based Flash Memory for AI Applications
A new FeFET flash memory developed in China aims to boost AI efficiency with enhanced speed and lower power consumption.
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