Researchers Develop Nonvolatile Memory Using Single Electron to Store One Bit

• July 23, 2026

Scientists at Fudan University in Shanghai have developed a breakthrough in energy-efficient memory technology, creating an experimental nonvolatile memory system that stores one bit of data using just a single electron. This advancement represents the theoretical minimum for electrical charge storage, paving the way for highly scalable and ultra-low-power memory devices.

Single Electron Storage: A New Frontier in Memory Technology

The research team at Fudan University focused on designing memory capable of retaining information without continuous power, a characteristic known as nonvolatility. While existing memory technologies often require multiple electrons or complex architectures to store individual bits, this new approach reduces the physical and electrical requirements to the absolute minimum — a single electron per bit.

This innovation offers significant implications for the future of data storage and electronics. By minimizing the energy needed to write and retain data, devices incorporating this memory could achieve considerable reductions in power consumption. This is especially important for applications in portable electronics, Internet of Things (IoT) devices, and other battery-dependent systems where efficiency is critical.

The intrinsic stability of the single-electron storage mechanism also indicates potential improvements in data retention and speed. As memory technologies continue to push toward smaller scales, managing electrons at such a granular level could facilitate increased storage densities beyond current semiconductor limits.

Recognizing the commercial potential of this technology, plans are underway to establish a dedicated company aimed at bringing the product to market. The goal is to transition from laboratory research to practical applications within the next three to five years, consulting industry partners and stakeholders to integrate the memory into consumer and industrial electronics.

While detailed specifications, pricing, and product form factors have yet to be disclosed, this breakthrough marks a significant stride toward the fundamental limits of information storage. The successful creation of a single-electron bit memory highlights the continuing evolution in semiconductor and memory research, driven by the quest for efficient, high-density, and low-power solutions.

As global demand for faster and more efficient computing devices grows, innovations like the one at Fudan University may redefine the performance and design of future electronic systems.

Scientists at Fudan University create experimental memory that stores one bit using a single electron, with commercial plans underway.